InSbN alloys prepared by two-step ion implantation for infrared photodetection
InSbN alloys prepared by two-step ion implantation for infrared photodetection
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DOI：
10.1063/1.2990756
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发表时间：
2008-10
影响因子：
4
通讯作者：
D. Zhang;Wei Liu;Y. Wang;X. Chen;Jing Li;Zhiming Huang;Sam Zhang
中科院分区：
文献类型：
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作者：
D. Zhang;Wei Liu;Y. Wang;X. Chen;Jing Li;Zhiming Huang;Sam Zhang
采用两步氮离子注入法在InSb（111）晶片上制备了InSbN合金。X射线光电子能谱分析表明，注入的氮离子大部分取代Sb形成In-N键。随着注入氮量的增加，In-N键的比例逐渐降低。这种合金可以有效地检测长波长红外辐射，并且可以通过监测注入氮剂量来控制吸收峰能量。测得的峰值波长与使用十带k-ε p模型计算的合金的带隙是一致的。
InSbN alloys are fabricated by two-step nitrogen ion implantation into InSb (111) wafers. X-ray photoelectron spectroscopy indicates that most of the implanted nitrogen ions substitute Sb to form In–N bonds. The percentage of the In–N bonds is found to decrease with the increase in the implanted nitrogen. Such alloys can effectively detect long wavelength infrared radiation and the absorption peak energies can be controlled by monitoring the implanted nitrogen dose. The measured peak wavelengths are consistent with the band gaps of the alloys calculated using a ten-band k⋅p model.