The effect of metal-rich growth conditions on the microstructure of Sc x Ga 1- x N films grown using molecular beam epitaxy
The effect of metal-rich growth conditions on the microstructure of Sc x Ga 1- x N films grown using molecular beam epitaxy
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富金属生长条件对分子束外延生长的 Sc x Ga 1- x N 薄膜微观结构的影响
DOI：
10.1002/pssa.201532292
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
Tsui H
中科院分区：
文献类型：
--
作者：
Tsui H
在富金属条件下使用分子束外延生长0 ≤x≤ 0.50的外延ScxGa 1-xN薄膜。尽管使用了富金属生长条件，ScxGa 1 −xN的生长速率随着Sc通量的增加而增加，这归因于Sc的存在引起的N2的催化分解。显微结构分析表明，在tox= 0.26时实现了相纯的纤锌矿ScxGa 1 −xN，这显著高于先前报道的富氮条件，这表明使用富金属条件可以帮助稳定纤锌矿相ScxGa 1 −xN。
Epitaxial ScxGa1−xN films with 0 ≤x≤ 0.50 were grown using molecular beam epitaxy under metal‐rich conditions. The ScxGa1−xN growth rate increased with increasing Sc flux despite the use of metal‐rich growth conditions, which is attributed to the catalytic decomposition of N2induced by the presence of Sc. Microstructural analysis showed that phase‐pure wurtzite ScxGa1−xN was achieved up tox= 0.26, which is significantly higher than that previously reported for nitrogen‐rich conditions, indicating that the use of metal‐rich conditions can help to stabilise wurtzite phase ScxGa1−xN.