Hydrogen sensing properties of SnO2 varistors loaded with SiO2 by surface chemical modification with diethoxydimethylsilane
Hydrogen sensing properties of SnO2 varistors loaded with SiO2 by surface chemical modification with diethoxydimethylsilane
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DOI：
10.1016/s0925-4005(99)00503-1
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发表时间：
2000-06-10
影响因子：
8.4
通讯作者：
Egashira, M
中科院分区：
文献类型：
--
作者：
Hyodo, T;Baba, Y;Egashira, M
研究了二乙氧基二甲基硅烷 (DEMS) 化学表面改性对纯 SnO2 和 Pd/SnO2 作为压敏电阻型传感器的 H-2 传感特性的影响。 DEMS 处理提高了击穿电压（尤其是在空气中），并提高了 SnO2 和 Pd/SnO2 压敏电阻的 H-2 灵敏度。交流阻抗测量表明，每个晶界的势垒高度 V-gb 随 H-2 浓度的变化与 H-2 的存在引起的击穿电压变化非常一致。因此，证实了H-2灵敏度的提高是由于DEMS处理的SiO2薄膜涂层引起的空气中V-gb的增加所致。 SiO2 薄膜涂层对 SnO2 颗粒之间颈部生长的限制预计是导致 V-gb 增加的原因。 (C) 2000 Elsevier Science S.A. 保留所有权利。
Effects of chemical surface modification with diethoxydimethylsilane (DEMS) on the H-2 sensing properties of pure SnO2 and Pd/SnO2 as a varistor-type sensor have been investigated. The DEMS treatment resulted in an increase in the breakdown voltage, especially in air, and in an improvement in H-2 sensitivity for both SnO2 and Pd/SnO2 varistors. A.C. impedance measurement has revealed that variations in potential barrier height per grain boundary, V-gb, With H-2 concentration are well coincident with the breakdown voltage shift induced by the presence of H-2. Thus, it was confirmed that the improved H-2 sensitivity arose from the increased V-gb in air induced by the SiO2 thin film coating by the DEMS treatment. The limitation of neck growth between SnO2 particles by the SiO2 thin film coating is anticipated to be responsible for the increased V-gb. (C) 2000 Elsevier Science S.A. All rights reserved.