Correlation between changeover from weak antilocalization (WAL) to weak localization (WL) and positive to negative magnetoresistance in S-doped Bi1.5Sb0.5Te1.3Se1.7
Correlation between changeover from weak antilocalization (WAL) to weak localization (WL) and positive to negative magnetoresistance in S-doped Bi1.5Sb0.5Te1.3Se1.7
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DOI：
10.1063/5.0094556
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发表时间：
2022-07-18
影响因子：
4
通讯作者：
Chatterjee，Sandip
中科院分区：
文献类型：
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作者：
Singh，Mahima;Ghosh，Labanya;Chatterjee，Sandip
