Localized terahertz generation via optical rectification in ZnTe
Localized terahertz generation via optical rectification in ZnTe
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DOI：
10.1364/josab.22.001667
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发表时间：
2005-08-01
影响因子：
1.9
通讯作者：
Shan, J
中科院分区：
文献类型：
--
作者：
Dakovski, GL;Kubera, B;Shan, J
我们报告了太赫兹 (THz) 辐射的测量结果，该辐射是通过 20 微米厚的 ZnTe 晶体中的光学整流产生的，作为光学激发大小的函数。结果表明，在显着的高阶非线性过程开始之前，对于小于太赫兹波长的激发尺寸，使用固定激发功率获得的太赫兹发射在很大程度上与尺寸无关。这一实验发现通过理论模型得到了很好的描述，包括通过亚波长源的光学整流产生太赫兹辐射及其传播到远场。亚波长太赫兹源辐射的特征尺寸依赖性对于无孔径近场显微镜的使用是有利的。 (c) 2005 年美国光学学会。
We report the measurement of terahertz (THz) radiation, generated via optical rectification in a 20 urn thick ZnTe crystal, as a function of the size of optical excitation. The result shows that, before the onset of significant higher-order nonlinear processes, the THz emission obtained with a fixed excitation power is largely size independent for excitation sizes smaller than the THz wavelength. This experimental finding is well described by a theoretical model including the generation of THz radiation through optical rectification from a subwavelength source and its propagation into the far field. The characteristic size dependence of the radiation from a subwavelength THz source is advantageous for use in apertureless near-field microscopy. (c) 2005 Optical Society of America.