Nano- and microdot array formation of FeSi2 by nanosecond excimer laser-induced forward transfer
Nano- and microdot array formation of FeSi2 by nanosecond excimer laser-induced forward transfer
复制标题
DOI：
10.1143/apex.1.057001
复制
发表时间：
2008-05-01
影响因子：
2.3
通讯作者：
Niino, Hiroyuki
中科院分区：
文献类型：
--
作者：
Narazaki, Aiko;Sato, Tadatake;Niino, Hiroyuki
利用纳秒激光诱导前向转移技术（ns-LIFT）实现了FeSi 2纳米点和微米点阵列的制备。在透明支撑物上的非晶FeSi 2源膜通过图案化成migcrogrid形式的纳秒受激准分子激光脉冲从支撑物照射，导致在硅衬底上的微点阵列的尺寸和位置控制的沉积。显微拉曼光谱证实了β-FeSi 2晶相，即使在未加热的基板上。此外，点的大小被成功地减少到约500 nm的直径，小于任何先前报道的ns-LIFT。该技术可用于在大气室温条件下集成功能纳米点和微米点。(c)2008年日本应用物理学会。
Fabrication of FeSi2 nano- and microdot array was performed by utilizing droplet ejection through nanosecond laser-induced forward transfer (ns-LIFT). An amorphous FeSi2 source film on a transparent support was illuminated from the support by a nanosecond excimer laser pulse patterned into migcrogrid form, resulting in size- and site-controlled deposition of microdot array onto a silicon substrate. Micro-Raman spectroscopy confirmed beta-FeSi2 crystalline phase even on unheated substrates. Moreover, the dot size was successfully reduced to approximately 500 nm in diameter, smaller than any previously reported by ns-LIFT. This technique is useful for integrating functional nano- and microdots under atmospheric room -temperature conditions. (c) 2008 The Japan Society of Applied Physics.