The effect of collector doping on the high-frequency generation in strongly coupled semiconductor superlattice
The effect of collector doping on the high-frequency generation in strongly coupled semiconductor superlattice
复制标题
集电极掺杂对强耦合半导体超晶格高频产生的影响
DOI：
--
复制
发表时间：
2015
期刊：
影响因子：
--
通讯作者：
A. Hramov
中科院分区：
文献类型：
--
作者：
V. Maksimenko;V. Makarov;A. Koronovskii;K. N. Alekseev;A. Balanov;A. Hramov
这封信重点分析了具有欧姆发射极和集电极接触的强耦合半导体超晶格中电荷域的时空动力学。我们基于电子传输的半经典近似的数值模拟表明，集电极掺杂可以极大地影响半导体结构中的电荷动力学，从而影响输出交流功率。我们证明，适当选择集电极触点的掺杂可以显着增加所生成信号的功率。
This letter focuses on the analysis of the spatio-temporal dynamics of charge domains in strongly coupled semiconductor superlattices with the Ohmic emitter and collector contacts. Our numerical simulations, based on the semiclassical approximation of the electron transport, show that the collector doping can dramatically affect the charge dynamics in the semiconductor structure and, therefore, the output AC power. We demonstrate that the appropriately chosen doping of the collector contacts can considerably increase the power of the generated signal.