Electroless Ni-B plating on SiO2 with 3-aminopropyl-triethoxysilane as a barrier layer against Cu diffusion for through-Si via interconnections in a 3-dimensional multi-chip package
Electroless Ni-B plating on SiO2 with 3-aminopropyl-triethoxysilane as a barrier layer against Cu diffusion for through-Si via interconnections in a 3-dimensional multi-chip package
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DOI：
10.1016/j.tsf.2008.09.068
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发表时间：
2009
期刊：
影响因子：
2.1
通讯作者：
A. Ikeda;A. Sakamoto;R. Hattori;Y. Kuroki
中科院分区：
文献类型：
--
作者：
A. Ikeda;A. Sakamoto;R. Hattori;Y. Kuroki
