Effects of n-butyl amine incorporation on the performance of perovskite light emitting diodes
Effects of n-butyl amine incorporation on the performance of perovskite light emitting diodes
复制标题
正丁胺掺入对钙钛矿发光二极管性能的影响
DOI：
10.1088/1361-6528/aaf68c
复制
发表时间：
2019
期刊：
影响因子：
3.5
通讯作者：
Yu Xuegong
中科院分区：
文献类型：
--
作者：
Xu Lingbo;Qiang Yaping;Hu Haihua;Lin Ping;Wang Peng;Che Siyuan;Sun Hao;Nie Zhiwei;Cui Can;Wu Fengmin;Yang Deren;Yu Xuegong
钙钛矿发光二极管（PeLED）的效率受到漏电流和非辐射复合的严重限制。在这里，我们引入正丁胺（BA）来调节钙钛矿薄膜的生长，以及提高PeLED的性能，并详细研究了BA的掺入对钙钛矿薄膜的结构，光学和电学特性的影响。结果表明，BA会终止晶粒表面，抑制晶体生长，导致辐射复合增加。然而，BA过载会使膜松动并重新创建分流路径。BA过载的电损害超过其光学益处。因此，最佳的PeLED可以得到只有适度的BA掺入。
The efficiency of perovskite light emitting diodes (PeLEDs) is crucially limited by leakage current and nonradiative recombination. Here we introduce n-butyl amine (BA) to modulate the growth of perovskite films as well as improve the performance of PeLEDs, and investigate in detail the effects of BA incorporation on the structural, optical, and electrical characteristics of perovskite films. The results indicate that BA would terminate the grain surface and inhibit crystal growth, leading to increased radiative recombination. However, BA overload would make the films loose and recreate shunt paths. The electrical detriment of BA overload outweighs its optical benefit. As a result, optimal PeLEDs can be obtained only with moderate BA incorporation.