Fabrication of Al thin wire by utilizing controlled accumulation of atoms due to electromigration
Fabrication of Al thin wire by utilizing controlled accumulation of atoms due to electromigration
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DOI：
10.1016/j.matlet.2005.12.107
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发表时间：
2006-08-01
影响因子：
3
通讯作者：
Nakanishi, R
中科院分区：
文献类型：
--
作者：
Saka, M;Nakanishi, R
提出了一种利用电迁移引起的原子有效收集来制备金属细丝的技术，这是一种由于高电流密度而导致的原子扩散现象。被电子流扩散的原子可以用来制造金属细丝。为了在预期的位置形成金属细丝，我们使用了钝化的铝薄膜线作为测试样品，该线的阳极端有一条狭缝。在外加电流的作用下，制备出了高深宽比的铝细丝。(C)2005 Elsevier B.V.保留所有权利。
A technique of fabricating metallic thin wires by utilizing effective collection of the atoms caused by electromigration, which is a phenomenon of atomic diffusion due to high current density, is presented. Atoms diffused by electron flow can be used for making metallic thin wires. To form metallic thin wire at the intended position, we used passivated Al thin film line that had a slit at the anode end of the line as a test sample. As a result of current applying, the Al thin wire of a high aspect ratio was fabricated. (c) 2005 Elsevier B.V. All rights reserved.