Photoluminescence of ZnO films excited with light of different wavelength
Photoluminescence of ZnO films excited with light of different wavelength
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DOI：
10.1016/s0169-4332(02)01225-4
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发表时间：
2003-02
影响因子：
6.7
通讯作者：
Dongju Zhang;Q. Wang;Z. Xue
中科院分区：
文献类型：
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作者：
Dongju Zhang;Q. Wang;Z. Xue
用不同波长的光激发射频溅射ZnO薄膜，观察到不同的光致发光谱。当激发光波长为270 nm时，蓝宝石、硅和石英衬底上的薄膜均产生了紫外发射峰（356 nm）和蓝光发射峰（446 nm）。玻璃衬底上的薄膜仅出现446 nm的蓝光发射。随着激发光波长的增加，薄膜的紫外发射消失，PL峰的波长分别增加到480和510 nm。当激发光波长增加到340- 395 nm时，PL谱变为一个宽的谱带，与三个发射峰相一致。
Different photoluminescence (PL) spectra were observed for rf sputtered ZnO films when excited with light of different wavelength. When the wavelength of the excitation light was 270nm, a UV emission peak (356nm) and a blue peak (446nm) were generated for the films on sapphire, silicon and quartz substrates. For the films on glass substrates only the 446nm blue emission appeared. With increasing the wavelength of the excitation light up to 300 and 320nm, the UV emission disappeared for films on various substrates and the wavelength of the PL peaks increased up to 480 and 510nm, respectively. When the wavelength of the excitation light increased to 340–395nm, the PL spectrum became a wide band which was consistent with three emission peaks.