Microcrack-free epitaxy of thick YBa2Cu3O7−δ films on vicinal r-cut sapphire buffered with CeO2
Microcrack-free epitaxy of thick YBa2Cu3O7−δ films on vicinal r-cut sapphire buffered with CeO2
复制标题
DOI：
10.1063/1.1926415
复制
发表时间：
2005-05
影响因子：
4
通讯作者：
J. Nie;H. Yamasaki;Y. Nakagawa;K. Develos-Bagarinao;M. Murugesan;H. Obara;Y. Mawatari
中科院分区：
文献类型：
--
作者：
J. Nie;H. Yamasaki;Y. Nakagawa;K. Develos-Bagarinao;M. Murugesan;H. Obara;Y. Mawatari
YBa2Cu3O7−δ (YBCO) 薄膜是通过脉冲激光沉积在故意误切的用 CeO2 缓冲的 Al2O3(11´02) 上制备的。扫描电子显微镜观察表明，1μm 厚的 YBCO 薄膜没有微裂纹。薄膜的表征揭示了 YBCO 的多孔形态和高结晶质量，CuO 平面垂直倾斜且经常终止。这些特征被认为是应变消除机制的一个促成因素，该机制负责增加薄膜厚度而不产生微裂纹。无微裂纹的厚YBCO薄膜显示Tc=90.5±0.5K，Jc(77.3K,0T)=2.0–3.0×106A∕cm2，并且Jc×t(77.3K,0T)大幅增强至246 A/cm。
YBa2Cu3O7−δ (YBCO) films were fabricated by pulsed laser deposition on deliberately miscut Al2O3(11¯02) buffered with CeO2. Scanning electron microscopy observations demonstrated that 1-μm-thick YBCO films were microcrack free. Characterization of the films revealed porous morphology and high crystalline quality of YBCO with CuO planes tilted vertically and terminated frequently. These features are considered to be a contributing factor to the strain-relieving mechanism responsible for the increase in film thickness without microcracking. Microcrack-free thick YBCO films revealed Tc=90.5±0.5K, Jc(77.3K,0T)=2.0–3.0×106A∕cm2, and a substantial enhancement of Jc×t(77.3K,0T) up to 246 A/cm.