Dielectric properties of sol–gel-derived MgO:Ba0.5Sr0.5TiO3 thin-film composites
Dielectric properties of sol–gel-derived MgO:Ba0.5Sr0.5TiO3 thin-film composites
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DOI：
10.1063/1.1515879
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发表时间：
2002-10
影响因子：
4
通讯作者：
Menka Jain;S. Majumder;R. Katiyar;D. C. Agrawal;A. Bhalla
中科院分区：
文献类型：
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作者：
Menka Jain;S. Majumder;R. Katiyar;D. C. Agrawal;A. Bhalla
异质结构氧化镁 (MgO):钛酸锶钡 (BST) 薄膜的交替层沉积被证明是一种合成具有更高品质因数的介电薄膜的方法，适用于微波介电应用。通过添加 MgO 可以改变介电常数和介电可调性。与纯 BST 薄膜相比，介电损耗角正切的显着降低有效地提高了异质结构薄膜的品质因数。介电损耗角正切值的显着降低归因于BST晶格中MgO的微小固溶度以及薄膜中MgO层引起的微观结构改变。
Alternate layer deposition of heterostructured magnesium oxide (MgO):barium strontium titanate (BST) thin films is demonstrated to be an approach to synthesize dielectric films with a higher figure of merit for microwave dielectric applications. The dielectric constant and the dielectric tunability are modified by MgO insertion. The dramatic reduction in the dielectric loss tangent effectively increased the figure of merit of the heterostructured thin films as compared to the pure BST films. The significant reduction in the dielectric loss tangent values has been attributed to the minute solid solubility of MgO in the BST lattice and the induced microstructural modifications induced by the MgO layers in thin films.