InP based lasers and optical amplifiers with wire-/dot-like active regions
InP based lasers and optical amplifiers with wire-/dot-like active regions
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DOI：
10.1088/0022-3727/38/13/004
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发表时间：
2005-07
期刊：
影响因子：
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通讯作者：
J. Reithmaier;A. Somers;S. Deubert;R. Schwertberger;Wolfgang Kaiser;Alfred Forchel;M. Calligaro;P. Resneau;O. Parillaud;S. Bansropun;M. Krakowski;R. Alizon;D. Hadass;A. Bilenca;Hanan Dery;V. Mikhelashvili;Gadi Eisenstein;M. Gioannini;I. Montrosset;T. W. Berg;M. Poel;Jesper Mørk;B. Tromborg
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文献类型：
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作者：
J. Reithmaier;A. Somers;S. Deubert;R. Schwertberger;Wolfgang Kaiser;Alfred Forchel;M. Calligaro;P. Resneau;O. Parillaud;S. Bansropun;M. Krakowski;R. Alizon;D. Hadass;A. Bilenca;Hanan Dery;V. Mikhelashvili;Gadi Eisenstein;M. Gioannini;I. Montrosset;T. W. Berg;M. Poel;Jesper Mørk;B. Tromborg
基于InAs量子线/点状有源区域的长波激光器和半导体光放大器在InP衬底上开发，专用于覆盖1.4至1.65 μ m之间的扩展电信波长范围。在简要概述中，将讨论不同的技术方法，而在主要部分，报告了量子冲刺激光器的现状和最新成果。这包括像虚线形成和材料生长，激光器和光学放大器的器件性能，静态和动态特性以及基本材料和器件建模的主题。
Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire-/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 and 1.65 µm. In a brief overview different technological approaches will be discussed, while in the main part the current status and recent results of quantum-dash lasers are reported. This includes topics like dash formation and material growth, device performance of lasers and optical amplifiers, static and dynamic properties and fundamental material and device modelling.