Enhancement of tunneling currents by isoelectronic nitrogen-atom doping at semiconductor pn junctions; comparison of indirect and direct band-gap systems
Enhancement of tunneling currents by isoelectronic nitrogen-atom doping at semiconductor pn junctions; comparison of indirect and direct band-gap systems
复制标题
通过半导体pn结等电子氮原子掺杂增强隧道电流；
DOI：
10.35848/1347-4065/ac9fb0
复制
发表时间：
2022
影响因子：
1.5
通讯作者：
Nakayama Takashi
中科院分区：
文献类型：
--
作者：
Cho Sanghun;Nakayama Takashi
