Slow Current-Drift Mechanism in n-Channel Inversion Type InP-MISFET
Slow Current-Drift Mechanism in n-Channel Inversion Type InP-MISFET
复制标题
n 沟道反转型 InP-MISFET 中的慢电流漂移机制
DOI：
10.1143/jjap.19.2143
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发表时间：
1980
影响因子：
1.5
通讯作者：
Takeshi Kobayashi
中科院分区：
文献类型：
--
作者：
M. Okamura;Takeshi Kobayashi
研究了n沟道反相型InP-MISFET的电流漂移机制。通过对InP-MISFET和Si-MISFET(与InP-MISFET相同)的漂移行为的比较和对其温度依赖性的测量，发现漂移源于电子陷阱，陷阱中心位于CVD-Al_2O_3栅绝缘层和InP自然氧化层中。由于俘获中心浓度较高(比Al_2O_3绝缘体高一个数量级)，InP自然氧化物是引起电流漂移的主要原因。自然氧化物中的陷阱能级和浓度估计分别为比费米能级高38 meV的∼和1.5×1017/cm~3。
The current drift mechanism inherent in n-channel inversion type InP-MISFET's were investigated. From comparison of drift behavior of InP-MISFET with that of Si-MISFET (fabricated in the same manner as that of InP-MISFET) and measurement of its temperature dependence, it was found that the drift originated from electron trappings, and the trapping centers located in the CVD-Al2O3 gate insulator and in the InP native oxide surface layer. Because of higher concentration of trapping centers (one order of magnitude higher than that of Al2O3 insulator), the InP native oxide served as the main cause of the observed current drift. The trap level and concentration in the native oxide were estimated to be ∼38 meV above Fermi level and 1.5×1017/cm3, respectively.