Effects of low work function metals on the barrier height of sulfide‐treated n‐type GaAs(100)
Effects of low work function metals on the barrier height of sulfide‐treated n‐type GaAs(100)
复制标题
低功函数金属对硫化物处理的n型GaAs(100)势垒高度的影响
DOI：
10.1063/1.352153
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发表时间：
1992
影响因子：
3.2
通讯作者：
R. Darling
中科院分区：
文献类型：
--
作者：
J. Samaras;R. Darling
通过电流-电压和电容-电压测量，对硫化物处理的GaAs（100）表面与低功函数金属接触的肖特基势垒高度变化进行了比较研究。发现五种不同的湿化学硫化物处理导致Sm（0.72 eV）和Mg（0.59 eV）肖特基势垒高度的微小变化，但与未处理的对照二极管相比，导致Al（0.58-0.75 eV）势垒高度的显著变化。发现低温（160 °C）退火导致所有这些的变化，均匀地提高Sm（+0.07 eV）和Al（+0.04 eV）接触的势垒高度，并且降低Mg接触。这些结果表明，肖特基势垒高度的反应特性和界面的稳定性的至关重要的。
A comparative study of the Schottky barrier height variation on sulfide‐treated GaAs(100) surfaces with low work function metal contacts was made using current‐voltage and capacitance‐voltage measurements. Five different wet chemical sulfide treatments were found to cause little variation in the Sm (0.72 eV) and Mg (0.59 eV) Schottky barrier heights, but caused significant variation in the Al (0.58–0.75 eV) barrier heights when compared to the untreated control diodes. A low temperature (160 °C) anneal was found to cause variation in all of these, uniformly raising the barrier heights of the Sm (+0.07 eV) and Al (+0.04 eV) contacts, and degrading the Mg contacts. These results demonstrate the critical importance of both the reaction specifics and the stability of the interface on the Schottky barrier height.