Electronic structure of subnanometer diameter MoS2-Ix nanotubes
Electronic structure of subnanometer diameter MoS2-Ix nanotubes
复制标题
亚纳米直径MoS2-Ix纳米管的电子结构
DOI：
10.1021/nl049068t
复制
发表时间：
2004
期刊：
影响因子：
10.8
通讯作者：
D. Mihailovic
中科院分区：
文献类型：
--
作者：
A. Zimina;S. Eisebitt;M. Freiwald;S. Cramm;W. Eberhardt;A. Mrzel;D. Mihailovic
利用软X射线吸收和X射线荧光光谱研究了亚纳米直径MoS 2 −Ix纳米管的局域电子结构。发现纳米管是半导体的，带隙为0.4 ± 0.2 eV。与2 H-MoS 2相比，导带和价带的电子态密度都发生了变化。基于简单模型结构的电子结构计算表明，这些变化主要归因于纳米管小直径所造成的Mo-S-Mo键角畸变效应。
The local electronic structure in subnanometer diameter MoS2−Ix nanotubes is investigated by soft X-ray absorption and X-ray fluorescence spectroscopies. The nanotubes are found to be semiconducting, with a band gap of 0.4 ± 0.2 eV. The density of electronic states is altered in both the conduction and the valence band as compared to 2H−MoS2. Electronic structure calculations based on simple model structures suggest that the changes can be mainly attributed to the effect of Mo−S−Mo bond angle distortion imposed by the small diameter of the nanotubes.