Quantum transport localization through graphene
Quantum transport localization through graphene
复制标题
通过石墨烯进行量子传输本地化
DOI：
10.1088/1361-6528/28/3/035703
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发表时间：
2017
期刊：
影响因子：
3.5
通讯作者：
Aono Masakazu
中科院分区：
文献类型：
--
作者：
Srivastava Saurabh;Kino Hiori;Nakaharai Shu;Verveniotis Elisseos;Okawa Yuji;Ogawa Shinichi;Joachim Christian;Aono Masakazu
使用全价电子结构描述作为缺陷密度的函数并考虑层的原子尺度变形，计算通过单个石墨烯层的原子缺陷诱导的电子输运的局部化。分析了导致安德森定位的基本电子相消干扰。低电压电流强度随着长度和缺陷密度的增加而减小，对于5%的缺陷密度，计算出的局域化长度λ = 3.5 nm。从实验缺陷密度的0.5%所需的氧化物表面支撑的石墨烯，以获得相同的电子转移的差异进行了讨论，指出如何石墨烯支撑表面和表面化学改性的相互作用也控制电子传输本地化。
Localization of atomic defect-induced electronic transport through a single graphene layer is calculated using a full-valence electronic structure description as a function of the defect density and taking into account the atomic-scale deformations of the layer. The elementary electronic destructive interferences leading to Anderson localization are analyzed. The low-voltage current intensity decreases with increasing length and defect density, with a calculated localization length ζ= 3.5 nm for a defect density of 5%. The difference from the experimental defect density of 0.5% required for an oxide surface-supported graphene to obtain the same ζ is discussed, pointing out how interactions of the graphene supporting surface and surface chemical modifications also control electronic transport localization.