Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate
Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate
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DOI：
10.1038/nphoton.2011.120
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发表时间：
2011-07-01
期刊：
影响因子：
35
通讯作者：
Seeds, Alwyn
中科院分区：
文献类型：
--
作者：
Liu, Huiyun;Wang, Ting;Seeds, Alwyn
半导体激光二极管在硅衬底上的实现将允许创建复杂的光电子电路，从而实现芯片到芯片和系统到系统的光通信。在硅或锗上直接外延生长III-V半导体材料是在硅平台上制作电泵浦光源的最有前途的候选材料之一。在这里，我们描述了第一个在Ge衬底上实现的量子点激光器。为了制作激光器，首先使用Ga预制层技术在Ge衬底上生长了单畴的GaAs缓冲层。然后在高质量的GaAs缓冲层上制备了长波长的InAs/GaAs量子点结构。在室温连续波电流驱动下，获得了波长为1,305 nm，低阈值电流密度为55.2 A cm(-2)的激光输出。结果表明，可以通过在Ge-on-Si衬底上外延生长的方法在Si衬底上实现长波长InAs/GaAs量子点激光器。
The realization of semiconductor laser diodes on Si substrates would permit the creation of complex optoelectronic circuits, enabling chip-to-chip and system-to-system optical communications. Direct epitaxial growth of III-V semiconductor materials on Si or Ge is one of the most promising candidates for the fabrication of electrically pumped light sources on a Si platform. Here, we describe the first quantum-dot laser to be realized on a Ge substrate. To fabricate the laser, a single-domain GaAs buffer layer was first grown on the Ge substrate using the Ga prelayer technique. A long-wavelength InAs/GaAs quantum-dot structure was then fabricated on the high-quality GaAs buffer layer. Lasing at a wavelength of 1,305 nm with a low threshold current density of 55.2 A cm(-2) was observed under continuous-wave current drive at room temperature. The results suggest that long-wavelength InAs/GaAs quantum-dot lasers on Si substrates may be realized by epitaxial growth on Ge-on-Si substrates.