Electrical properties of AC3B4O12-type perovskite ceramics with different cation vacancies
Electrical properties of AC3B4O12-type perovskite ceramics with different cation vacancies
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DOI：
10.1016/j.materresbull.2015.02.012
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发表时间：
2015-05-01
影响因子：
5.4
通讯作者：
Elouadi, Brahim
中科院分区：
文献类型：
--
作者：
Li, Guizhong;Chen, Zhi;Elouadi, Brahim
采用传统固相反应法制备了不同阳离子空位浓度的AC（3）B（4）O（12）型钙钛矿型CaCu 3 Ti4 O 12（CTO）、方形0.34Pr 0.67Cu3Ti4O 12（PCTO）、方形1Cu 3 Ta 2 Ti 2 O 12（CTTO）、方形2Cu 2 Ta 4 O 12（CTO）陶瓷。X射线衍射分析表明，CTO和PCTO为钙钛矿型立方晶系，空间群Im-3（no.204），CTTO和CTO为Pm-3（no.200）。样品的晶胞参数随着阳离子空位的增加而显著增加。从室温到550 K，它们的介电常数都保持在10（4）左右，但介电损耗随着空间群中阳离子空位的增加而降低。用德拜弛豫和普适介电响应分别描述了样品的介电性能和电导率行为。讨论了阳离子空位和晶体结构对载流子移位的影响机理。(C)2015爱思唯尔有限公司版权所有。
AC(3)B(4)O(12)-type perovskite CaCu3Ti4O12 (CCTO), square 0.34Pr0.67Cu3Ti4O12 (PCTO), square 1Cu3Ta2Ti2O12 (CTTO), square 2Cu2Ta4O12 (CTO) ceramics with different concentration cation vacancies were prepared through traditional solid state reaction method. X-ray diffraction analysis indicated that CCTO and PCTO are perovskite cubic with space group Im-3 (no. 204) while CTTO and CTO are Pm-3 (no. 200). Cell parameter of the samples dramatically increases with the increase of cation vacancies. Dielectric permittivity of them maintains very high value of similar to 10(4) from room temperature to 550K but the dielectric loss is depressed with the increase of cation vacancies in the same space group. The dielectric properties and conductivity behavior were described by the Debye relaxation and the universal dielectric response, respectively. The effect mechanism of cation vacancy and crystal structure on carrier transposition were discussed. (C) 2015 Elsevier Ltd. All rights reserved.