Auger recombination in InGaN measured by photoluminescence
Auger recombination in InGaN measured by photoluminescence
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DOI：
10.1063/1.2785135
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发表时间：
2007-10-01
影响因子：
4
通讯作者：
Krames, M. R.
中科院分区：
文献类型：
--
作者：
Shen, Y. C.;Mueller, G. O.;Krames, M. R.
用光致发光技术测量了生长在GaN（0001）上的准体InxGa 1-xN（x = 9%-15%）层的俄歇复合系数。样品在InN成分、厚度和穿透位错密度方面有所不同。在整个样品组中，测得的俄歇系数范围为1.4x10（-30）至2.0x10（-30）cm（6）s（-1）。作者认为，这种量级的俄歇系数，结合蓝色和绿色InGaN/GaN（0001）量子阱发光二极管（LED）中达到的高载流子密度，是在非常低的电流密度下观察到这些器件中的最大外部量子效率的原因。因此，俄歇复合是载流子在典型LED工作电流下的主要非辐射路径，并且是即使在室温（短脉冲、低占空因数）注入条件下随着电流增加效率下降的原因。(C)2007年，美国物理学会。
The Auger recombination coefficient in quasi-bulk InxGa1-xN (x similar to 9%-15%) layers grown on GaN (0001) is measured by a photoluminescence technique. The samples vary in InN composition, thickness, and threading dislocation density. Throughout this sample set, the measured Auger coefficient ranges from 1.4x10(-30) to 2.0x10(-30) cm(6) s(-1). The authors argue that an Auger coefficient of this magnitude, combined with the high carrier densities reached in blue and green InGaN/GaN (0001) quantum well light-emitting diodes (LEDs), is the reason why the maximum external quantum efficiency in these devices is observed at very low current densities. Thus, Auger recombination is the primary nonradiative path for carriers at typical LED operating currents and is the reason behind the drop in efficiency with increasing current even under room-temperature (short-pulsed, low-duty-factor) injection conditions. (C) 2007 American Institute of Physics.