The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors
The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors
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DOI：
10.1109/tns.2004.825077
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发表时间：
2004-04
影响因子：
1.8
通讯作者：
Xinwen Hu;B. Choi;H. Barnaby;D. Fleetwood;peixiong zhao;Sungchul Lee;S. Shojah-Ardalan;R. Wilkins;U. Mishra;R. Dettmer
中科院分区：
文献类型：
--
作者：
Xinwen Hu;B. Choi;H. Barnaby;D. Fleetwood;peixiong zhao;Sungchul Lee;S. Shojah-Ardalan;R. Wilkins;U. Mishra;R. Dettmer
报告了不同能量下质子辐照对 AlGaN/GaN 高电子迁移率晶体管 (HEMT) 的影响。当在能量密度高达 10/sup 13/ cm/sup -2/ 的 15-、40-和 105-MeV 质子照射下，该器件表现出很小的退化，并且在室温退火后损坏完全恢复。对于1.8-MeV质子辐照，在注量为10/sup 12/ cm/sup -2/时，漏极饱和电流降低了10.6%，最大跨导降低了6.1%。这里考虑的最低质子能量下测得的更大降解是由 1.8-MeV 质子更大的非电离能量损失引起的。
The effects of proton irradiation at various energies are reported for AlGaN/GaN high electron mobility transistors (HEMTs). The devices exhibit little degradation when irradiated with 15-, 40-, and 105-MeV protons at fluences up to 10/sup 13/ cm/sup -2/, and the damage completely recovers after annealing at room temperature. For 1.8-MeV proton irradiation, the drain saturation current decreases 10.6% and the maximum transconductance decreases 6.1% at a fluence of 10/sup 12/ cm/sup -2/. The greater degradation measured at the lowest proton energy considered here is caused by the much larger nonionizing energy loss of the 1.8-MeV protons.