Precise Control of Annealed Wafer For Nanometer Devices
Precise Control of Annealed Wafer For Nanometer Devices
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纳米器件退火晶圆的精确控制
DOI：
10.1149/1.2355754
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
M. Hirasawa
中科院分区：
文献类型：
--
作者：
Matsushita Yoshiaki;H. Nagahama;R. Takeda;M. Hirasawa
在纳米器件时代，原子级表面形貌成为影响器件性能的关键问题之一。在不同的晶圆类型和表面指标下，对原子水平的表面形貌进行了评价。结果表明，与其他晶圆相比，氢退火晶圆具有最大的台阶。阶梯的高度最低，是单原子的。可以通过调节外角和方位角来控制平台的宽度。通过使用氢退火晶片，该器件的通道区域具有原子平坦或仅一步的单原子高度。从从头算分子轨道计算可以看出，氢气在退火初始阶段有效地清洁了表面，并平滑地重建了表面。
In the nanometer device era, surface morphology of atomic level becomes one of critical issues for device performance. The surface morphology of atomic level was evaluated in various wafer types and surface indexes. It was found that a hydrogen anneal wafer has the largest terrace comparing to other wafers. And the step is the lowest height, which is mono-atomic. It is possible to control the terrace width by adjusting the off angle and azimuth. The channel area of the device has atomically flat or only one step with mono-atomic height by using the hydrogen-annealed wafer. From ab initio molecular orbital calculation, it is considered that the hydrogen gas effectively made clean the surface at the initial stage of annealing and reconstructs surface smoothly.