Epitaxial graphene on cubic SiC(111)Si(111) substrate.
Epitaxial graphene on cubic SiC(111)Si(111) substrate.
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DOI：
10.1063/1.3427406
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发表时间：
2010-05
影响因子：
4
通讯作者：
A. Ouerghi;A. Kahouli;D. Lucot;M. Portail;L. Travers;J. Giérak;J. Penuelas;P. Jégou;A. Shukla;T. Chassagne;M. Zielinski
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文献类型：
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作者：
A. Ouerghi;A. Kahouli;D. Lucot;M. Portail;L. Travers;J. Giérak;J. Penuelas;P. Jégou;A. Shukla;T. Chassagne;M. Zielinski
采用固相石墨化法在碳化硅（SiC）衬底上外延生长石墨烯薄膜在电子学和光电学领域具有重要的应用价值。本文研究了在3C-SiC（111）Si（111）衬底上外延石墨烯薄膜的性质。X射线光电子能谱和扫描隧道显微镜被广泛用于表征少层石墨烯（FLG）表面的质量。拉曼光谱研究在确认石墨组成和测量FLG样品的厚度是有用的。
Epitaxial graphene films grown on silicon carbide (SiC) substrate by solid state graphitization is of great interest for electronic and optoelectronic applications. In this paper, we explore the properties of epitaxial graphene films on 3C-SiC(111)Si(111) substrate. X-ray photoelectron spectroscopy and scanning tunneling microscopy were extensively used to characterize the quality of the few-layer graphene (FLG) surface. The Raman spectroscopy studies were useful in confirming the graphitic composition and measuring the thickness of the FLG samples.