Modeling of electrical response for semiconducting ferrite
Modeling of electrical response for semiconducting ferrite
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DOI：
10.1063/1.334193
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发表时间：
1984-09
影响因子：
3.2
通讯作者：
H. Cheng
中科院分区：
文献类型：
--
作者：
H. Cheng
研究了铁氧体半导材料的电学性能。提出了一个简化的模型，由高阻晶界层分离的大块材料。讨论了晶界的性质对其电学行为的影响。采用复阻抗技术分析了多晶样品的电响应。MnZn-铁氧体试样的复阻抗频散曲线的特性受烧结和退火条件的影响。所有的复阻抗图都不同于理想的曲线，但可以用圆弧很好地拟合。提出了一个实验等效电路来解释所观察到的R-X色散。由于可控气氛烧结导致的晶界电阻率的巨大增加归因于优先氧化。在高频区域中试样的表观电阻的降低是由极化效应引起的。这是由于这种材料的特殊微结构，即具有绝缘晶界的半导体块体材料。
The electrical properties of semiconducting ferrite materials are investigated. A simplified model, consisting of bulk material separated by highly resistive grain boundary layers, is proposed. The nature of grain boundary on its electrical behavior is also discussed. Complex impedance technique is used to analyze the electrical response of polycrystalline specimens. The characteristics of the complex impedance dispersion curves for MnZn‐ferrite specimens are affected by the sintering and annealing conditions. All the complex impedance plots differ from idealized semicircles, but can be fitted by circular arcs very well. An experimental equivalent circuit is proposed to explain the observed R‐X dispersion. The tremendous increase in the grain boundary resistivity due to controlled‐atmosphere sintering is ascribed to the preferential oxidation. The decrease in the apparent resistance of the specimens in the high‐frequency region arises from the polarization effect. This is attributed to the special microstructure of such material, namely, semiconducting bulk material with insulating grain boundaries.