Fully electrical read-write device out of a ferromagnetic semiconductor.
Fully electrical read-write device out of a ferromagnetic semiconductor.
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DOI：
10.1103/physrevlett.106.057204
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发表时间：
2010-12
影响因子：
8.6
通讯作者：
S. Mark;P. Dürrenfeld;K. Pappert;L. Ebel;K. Brunner;C. Gould;L. Molenkamp
中科院分区：
文献类型：
--
作者：
S. Mark;P. Dürrenfeld;K. Pappert;L. Ebel;K. Brunner;C. Gould;L. Molenkamp
我们报道了一种由铁磁半导体（Ga,Mn）制成的读写器件的实现，这是迈向全新信息处理范式的第一步。磁态的写入是通过电流感应开关实现的，磁态的读出是通过隧穿各向异性磁阻效应实现的。该1位演示装置可用于设计电可编程存储器和逻辑器件。
We report the realization of a read-write device out of the ferromagnetic semiconductor (Ga,Mn)As as the first step to a fundamentally new information processing paradigm. Writing the magnetic state is achieved by current-induced switching and readout of the state is done by the means of the tunneling anisotropic magnetoresistance effect. This 1 bit demonstrator device can be used to design an electrically programmable memory and logic device.