Heat-resistant die-attach with cold-rolled Ag sheet
Heat-resistant die-attach with cold-rolled Ag sheet
复制标题
耐热冷轧银片芯片粘接
DOI：
10.7567/apex.11.016501
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发表时间：
2017
影响因子：
2.3
通讯作者：
K. Suganuma
中科院分区：
文献类型：
--
作者：
S. Noh;C. Choe;Chuantong Chen;K. Suganuma
这项工作介绍了一种使用冷轧银片的键合技术，它在空气中提供了独特的反应，实现了宽禁带半导体的低压低温贴片。银板的冷轧使晶粒细化到亚微米级，具有较高的残余应力，这是银板上丘状生长的驱动力，导致了紧密的结合。用透射电子显微镜研究了土丘连接的详细机理。透射电子显微镜图像和电子衍射图表明，在两种银物质的接触区形成了大量的自生银纳米颗粒。
This work introduces a bonding technology that employs a cold-rolled Ag sheet, which provides a unique reaction in air, to achieve low-pressure and low-temperature die-attachment for wide-bandgap semiconductors. The cold rolling of the Ag sheet induces grain refinement down to a sub-micron level with high residual stress, which is the driving force for hillock growth on the Ag sheet, resulting in intimate bonding. The detailed mechanism underlying the hillock joining was investigated via transmission electron microscopy (TEM). TEM images and electron-diffraction patterns showed that a large quantity of self-generated Ag nanoparticles formed in the contact area between two Ag substances.