Influence of Directional Solidification on the Creep Properties of a Binary NbSi Eutectic Alloy

Influence of Directional Solidification on the Creep Properties of a Binary NbSi Eutectic Alloy
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定向凝固对二元NbSi共晶合金蠕变性能的影响

DOI:
10.1007/s11837-014-1109-6
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发表时间:
1913
期刊:
JOM
影响因子:
2.6
通讯作者:
Heilmaier
Heilmaier
中科院分区:
材料科学3区
文献类型:
--
作者:
Heilmaier

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定向凝固(DS)对二元NbSi共晶nb - 18at蠕变性能的影响。研究了由Nb固溶体和Nb3Si硅化相组成的% Si。并与粉末冶金生产的相同合金成分进行了比较评价。蠕变行为是确定为温度高达1400°C和应力高达150mpa这两种材料。结果表明,在最小蠕变速率方面,DS工艺的抗蠕变性能显著提高了约3个数量级;这种显著差异主要归因于微观结构特征的不同尺寸(PM中的相尺寸与DS材料中的细胞尺寸)。扩散蠕变可能是PM和DS材料的主要蠕变机制。与文献数据相比,发现引起蠕变温度依赖性的活化能非常高。认为这两相的作用导致了这种高蠕变活化能。与最先进的单晶镍基高温合金(cmsx4)相比,DS NbSi共晶材料的抗蠕变性能得到了显著改善。
The influence of directional solidification (DS) on the creep properties of the binary NbSi eutectic, Nb-18 at.% Si, consisting of Nb solid solution and the Nb3Si silicide phase, is investigated. It is comparatively assessed with an identical alloy composition produced by means of powder metallurgy (PM). The creep behavior is determined for both materials for temperatures up to 1400°C and stresses up to 150 MPa. It is found that the DS process leads to an outstanding improvement of the creep resistance of about three orders of magnitude in terms of minimum creep rate; this significant difference can mainly be attributed to the different sizes of microstructural features (phase size in PM versus cell size in DS material). Diffusional creep may be the responsible creep mechanism in both the PM and the DS material. The activation energies that are responsible for the temperature dependence of creep are found to be very high compared with literature data. It is believed that the contribution of the two phases leads to this high creep activation energy. Comparison with a state-of-the-art single-crystalline nickel-based superalloy (CMSX 4) underpins the outstanding improvement of the creep resistance of DS NbSi eutectics.
Hf和Ti添加对Cr_2Nb-Nb原位复合材料组织和性能的影响
DOI: --
发表时间: 1996
期刊:
影响因子: --
作者:
B. Bewlay;M. R. Jackson
通讯作者: M. R. Jackson
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DOI: --
发表时间: 2000
期刊:
影响因子: --
作者:
B. Bewlay;C. Briant;E. Sylvén;M. R. Jackson;G. Xiao
通讯作者: G. Xiao