Epitaxial growth of a single-crystal hybridized boron nitride and graphene layer on a wide-band gap semiconductor.
Epitaxial growth of a single-crystal hybridized boron nitride and graphene layer on a wide-band gap semiconductor.
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DOI：
10.1021/jacs.5b03151
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发表时间：
2015-05
影响因子：
15
通讯作者：
Ha-Chul Shin;Yamujin Jang;Tae-Hoon Kim;Jun-Hae Lee;D. Oh;S. Ahn;Jae Hyun Lee;Y. Moon;Ji-Hoon Park;S. Yoo;Chong-Yun Park;D. Whang;Cheol‐Woong Yang;J. Ahn
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文献类型：
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作者：
Ha-Chul Shin;Yamujin Jang;Tae-Hoon Kim;Jun-Hae Lee;D. Oh;S. Ahn;Jae Hyun Lee;Y. Moon;Ji-Hoon Park;S. Yoo;Chong-Yun Park;D. Whang;Cheol‐Woong Yang;J. Ahn
二维（2D）材料的垂直和横向非均质结构为二维材料的物理和应用的开创性研究铺平了道路。利用化学气相沉积（CVD）技术在单晶金属或金属箔上制备了六方氮化硼（h-BN）与石墨烯横向杂化的非均相二维结构。然而，一旦在金属上制造，h-BN/石墨烯横向结构需要额外的转移工艺用于器件应用，如在金属箔上生长的CVD石墨烯。在这里，我们证明了单晶h-BN/石墨烯横向结构可以在宽间隙半导体SiC（0001）上外延生长。首先，在850℃的温度下，用硼氮烷分子在si端SiC衬底上生长出与体SiC取向相同的单晶h-BN层。其次，当真空加热到1150°C以上时，h-BN层被部分去除，随后被石墨烯畴取代。有趣的是，这些石墨烯畴具有与h-BN层相同的取向，从而在整个样品区域上形成单晶h-BN/石墨烯横向结构。当温度高于1600℃时，单晶h-BN层完全被单晶石墨烯层所取代。利用低能电子衍射、角分辨光电发射光谱和扫描隧道显微镜分别研究了h-BN/石墨烯横向结构的晶体结构、电子能带结构和原子结构。在宽间隙半导体衬底上制造的h-BN/石墨烯横向结构可以直接应用于器件，而无需进一步的转移过程，正如在SiC衬底上的外延石墨烯所报道的那样。
Vertical and lateral heterogeneous structures of two-dimensional (2D) materials have paved the way for pioneering studies on the physics and applications of 2D materials. A hybridized hexagonal boron nitride (h-BN) and graphene lateral structure, a heterogeneous 2D structure, has been fabricated on single-crystal metals or metal foils by chemical vapor deposition (CVD). However, once fabricated on metals, the h-BN/graphene lateral structures require an additional transfer process for device applications, as reported for CVD graphene grown on metal foils. Here, we demonstrate that a single-crystal h-BN/graphene lateral structure can be epitaxially grown on a wide-gap semiconductor, SiC(0001). First, a single-crystal h-BN layer with the same orientation as bulk SiC was grown on a Si-terminated SiC substrate at 850 °C using borazine molecules. Second, when heated above 1150 °C in vacuum, the h-BN layer was partially removed and, subsequently, replaced with graphene domains. Interestingly, these graphene domains possess the same orientation as the h-BN layer, resulting in a single-crystal h-BN/graphene lateral structure on a whole sample area. For temperatures above 1600 °C, the single-crystal h-BN layer was completely replaced by the single-crystal graphene layer. The crystalline structure, electronic band structure, and atomic structure of the h-BN/graphene lateral structure were studied by using low energy electron diffraction, angle-resolved photoemission spectroscopy, and scanning tunneling microscopy, respectively. The h-BN/graphene lateral structure fabricated on a wide-gap semiconductor substrate can be directly applied to devices without a further transfer process, as reported for epitaxial graphene on a SiC substrate.