Terahertz Metamaterial Absorbers Implemented in CMOS Technology for Imaging Applications: Scaling to Large Format Focal Plane Arrays
Terahertz Metamaterial Absorbers Implemented in CMOS Technology for Imaging Applications: Scaling to Large Format Focal Plane Arrays
复制标题
DOI：
10.1109/jstqe.2016.2630307
复制
发表时间：
2017-07-01
影响因子：
4.9
通讯作者：
Cumming, David
中科院分区：
文献类型：
--
作者：
Carranza, Ivonne Escorcia;Grant, James P.;Cumming, David
我们提出了太赫兹（THz）超材料（MM）吸收剂的设计和制造，并将其单片集成到商业CMOS技术沿着其各自的读出电子设备，以生产低成本，非制冷，高分辨率的太赫兹相机。我们首先描述了在自定义衬底上的单波段和宽带MM吸收器上所做的工作，然后描述了将这种谐振器集成到六个金属层180 nm CMOS工艺中，并与两种类型的微测辐射热计传感器耦合：氧化钒（VOx）和硅（Si）pn二极管。此外，我们证明了太赫兹传感器与读出电子集成，形成单片太赫兹焦平面阵列（FPA）。使用VOx和Si pn二极管探测器记录了隐藏在马尼拉信封中的金属物体的反射图像，证明了该技术对隐藏物体的远距离探测的适用性。最后，我们提出了目前的工作，将这项技术扩展到64 × 64焦平面。
We present the design and fabrication of terahertz (THz) metamaterial (MM) absorbers and their monolithic integration into a commercial CMOS technology along with its respective readout electronics to produce a low-cost, uncooled, and high resolution THz camera. We first describe the work done on single band and broadband MM absorbers on custom substrates, then progress with a description of the integration of such resonators into a six metal layer 180 nm CMOS process and its coupling with two types of microbolometer sensors: Vanadium oxide (VOx) and silicon (Si) pn diode. Additionally, we demonstrate the integration of the THz sensors with readout electronics to form a monolithic THz focal plane array (FPA). Reflection images of a metallic object hidden in a manila envelope are recorded using both the VOx and Si pn diode detectors, demonstrating the suitability of the technology for stand-off detection of concealed objects. Finally, we present the current work toward scaling this technology into a 64 x 64 FPA.