Dual-Band and Triple-Band Substrate Integrated Waveguide Filters With Chebyshev and Quasi-Elliptic Responses

Dual-Band and Triple-Band Substrate Integrated Waveguide Filters With Chebyshev and Quasi-Elliptic Responses
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DOI:
10.1109/tmtt.2007.909603
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发表时间:
2007-12
影响因子:
4.3
通讯作者:
Xiaoping Chen;K. Wu;Zhao-Long Li
Xiaoping Chen;K. Wu;Zhao-Long Li
中科院分区:
工程技术1区
文献类型:
--
作者:
Xiaoping Chen;K. Wu;Zhao-Long Li

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本文首次提出并论证了基于衬底集成波导技术的具有切比雪夫和准椭圆对称频率响应的双通带和三通带滤波器的合成和设计技术。首先研究逆变器耦合谐振器部分,然后分别从具有切比雪夫或准椭圆响应的广义低通原型合成由逆变器耦合谐振器部分组成的双通带切比雪夫滤波器、三通带切比雪夫滤波器和双通带准椭圆滤波器。随后,在 - 带频率范围内使用衬底集成波导方案设计并实现了这些具有对称响应的滤波器。由并排水平定向的衬底集成波导腔组成的逆变器耦合谐振器部分依次通过后壁虹膜耦合。 50Ω微带线用于直接激励滤波器。给出了测量结果,并与 Ansoft 高频结构模拟器 (HFSS) 软件包模拟的结果进行比较。观察到模拟结果和测量结果之间具有良好的一致性,这也验证了所提出的利用衬底集成技术进行设计和合成的概念。
In this paper, synthesis and design techniques of dual- and triple-passband filters with Chebyshev and quasi-elliptic symmetric frequency responses are proposed and demonstrated for the first time on the basis of substrate integrated waveguide technology. The inverter coupled resonator section is first investigated, and then a dual-passband Chebyshev filter, a triple-passband Chebyshev filter, and a dual-passband quasi-elliptic filter, which consist of the inverter coupled resonator sections, are synthesized from the generalized low-pass prototypes having Chebyshev or quasi-elliptic responses, respectively. Subsequently, theses filters with a symmetric response are designed and implemented using the substrate integrated waveguide scheme over the -band frequency range. The inverter coupled resonator sections composed of side-by-side horizontally oriented substrate integrated waveguide cavities are coupled, in turn, by post-wall irises. 50-Omega microstrip lines are used to directly excite the filters. Measured results are presented and compared to those simulated by Ansoft's High Frequency Structure Simulator (HFSS) software package. A good agreement between the simulated and measured results is observed, which has also validated the proposed concept of design and synthesis with the substrate integration technology.