Experimental determination of mobility scattering mechanisms in Si/HfO/sub 2//TiN and SiGe:C/HfO/sub 2//TiN surface channel n- and p-MOSFETs
Experimental determination of mobility scattering mechanisms in Si/HfO/sub 2//TiN and SiGe:C/HfO/sub 2//TiN surface channel n- and p-MOSFETs
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Si/HfO/sub 2//TiN 和 SiGe:C/HfO/sub 2//TiN 表面沟道 n- 和 p-MOSFET 迁移率散射机制的实验测定
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发表时间：
2004
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通讯作者：
S. Deleonibus
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作者：
O. Weber;F. Andrieu;M. Cassé;T. Ernst;J. Mitard;F. Ducroquet;J. Damlencourt;J. Hartmann;D. Lafond;A. Papon;L. Militaru;L. Thevenod;K. Romanjek;C. Leroux;F. Martin;B. Guillaumot;G. Ghibaudo;S. Deleonibus
我们证明了一个广泛的实验研究HfO/sub 2//TiN和SiO/sub 2//TiN栅堆叠晶体管相比，SiO/sub 2//poly-Si参考，空穴迁移率主要是由表面粗糙度（SR）与TiN的存在下退化。因此，我们提出了高迁移率SiGe或SiGe：C表面沟道pMOSFET与HfO/sub 2//TiN栅极堆叠使用适当的价带工程附近的电介质/沟道界面（高达100%的空穴迁移率增强E/sub eff/ = 1 MV/cm）。另一方面，HfO/sub 2//TiN栅堆叠的电子迁移率被远程库仑散射（RCS）降低。
We demonstrate by an extensive experimental study of HfO/sub 2//TiN and SiO/sub 2//TiN gate stacked-transistors compared with the SiO/sub 2//poly-Si reference, that the hole mobility is mainly degraded by the surface roughness (SR) linked to the presence of TiN. We thus propose high mobility SiGe or SiGe:C surface channel pMOSFETs with HfO/sub 2//TiN gate stacks using an adequate valence band engineering near the dielectric/channel interface (up to 100% hole mobility enhancement at E/sub eff/ = 1 MV/cm). On the other hand, the electron mobility with HfO/sub 2//TiN gate stacks is reduced by remote Coulomb scattering (RCS).