Broadband Emission from Stacked InAs Quantum Dots Embedded with GaAs Layers Under Various Growth Rates for Broadband Light Source Applications
Broadband Emission from Stacked InAs Quantum Dots Embedded with GaAs Layers Under Various Growth Rates for Broadband Light Source Applications
复制标题
宽带光源应用中嵌入 GaAs 层的堆叠 InAs 量子点在不同增长率下的宽带发射
DOI:
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发表时间:
2021
期刊:
影响因子:
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通讯作者:
and N. Ozaki
中科院分区:
文献类型:
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作者:
T. Wang;J. Oshima;H. Ohsato;E. Watanabe;N. Ikeda;Y. Sugimoto;and N. Ozaki