Broadband Emission from Stacked InAs Quantum Dots Embedded with GaAs Layers Under Various Growth Rates for Broadband Light Source Applications

Broadband Emission from Stacked InAs Quantum Dots Embedded with GaAs Layers Under Various Growth Rates for Broadband Light Source Applications
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宽带光源应用中嵌入 GaAs 层的堆叠 InAs 量子点在不同增长率下的宽带发射

DOI:
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发表时间:
2021
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通讯作者:
and N. Ozaki
and N. Ozaki
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文献类型:
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作者:
T. Wang;J. Oshima;H. Ohsato;E. Watanabe;N. Ikeda;Y. Sugimoto;and N. Ozaki

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