Simplified RF noise de-embedding method for on-wafer CMOS FET
Simplified RF noise de-embedding method for on-wafer CMOS FET
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DOI：
10.1049/el:20071442
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发表时间：
2007-08
影响因子：
1.1
通讯作者：
Y. Xiong;A. Issaoun;Lan Nan;Jinglin Shi;K. Mouthaan
中科院分区：
文献类型：
--
作者：
Y. Xiong;A. Issaoun;Lan Nan;Jinglin Shi;K. Mouthaan
提出了一种简化的用于晶片上CMOS器件的RF噪声去嵌入方法，该方法仅使用一个虚拟结构以简化和减小面积。该方法描述了使用一个“直通”测试结构，以完全减去从被测器件的焊盘和输入/输出互连的寄生效应。将该方法与现有的去嵌入方法进行了比较，证明了该方法的有效性、准确性和时间效率。
A simplified RF noise de-embedding method for an on-wafer CMOS device using only one dummy structure for simplicity and area reduction is presented. The method describes the use of a 'thru' test structure to subtract completely the parasitic effects of pads and in/out interconnections from the device under test. A comparison of the de-embedding results among the simplified method and existing de-embedding methods is given, which proves that the new method is effective, accurate and time efficient.