Hydrogen Concentration and Distribution in High-Purity Germanium Crystals
Hydrogen Concentration and Distribution in High-Purity Germanium Crystals
复制标题
高纯锗晶体中的氢浓度和分布
DOI：
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发表时间：
1982
影响因子：
1.8
通讯作者：
Paul N. Luke
中科院分区：
文献类型：
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作者：
William L. Hansen;Eugene E. Haller;Paul N. Luke
用于制造核辐射探测器的高纯度锗晶体通常是在氢气环境中从高纯度二氧化硅坩埚中的熔体中生长出来的。回顾了使用氢气环境的好处和遇到的问题。通过在掺氚的氢气中生长晶体并计算由这些晶体制成的探测器中的氚衰变，测得氢的浓度约为2×1015 cm-3。退火研究表明，氢是强结合的，要么是与缺陷结合，要么是作为解离能为>；3 eV的H2。当铜存在时，这被降低到1.8 eV。在氢气中生长的无位错晶体中，用腐蚀剥离方法发现了密度约为1×10~7 cm~(-3)的腐蚀缺陷，估计每个缺陷含有108H原子。
High-purity germanium crystals used for making nuclear radiation detectors are usually grown in a hydrogen ambient from a melt contained in a high-purity silica crucible. The benefits and problems encountered in using a hydrogen ambient are reviewed. A hydrogen concentration of about 2×1015cm-3 has been determined by growing crystals in hydrogen spiked with tritium and counting the tritium ß-decays in detectors made from these crystals. Annealing studies show that the hydrogen is strongly bound, either to defects or as H2 with a dissociation energy > 3eV. This is lowered to 1.8eV when copper is present. Etching defects in dislocation-free crystals grown in hydrogen have been found by etch stripping to have a density of about 1×107cm-3 and are estimated to contain 108H atoms each.