Surface and grain boundary scattering in nanometric Cu thin films: A quantitative analysis including twin boundaries
Surface and grain boundary scattering in nanometric Cu thin films: A quantitative analysis including twin boundaries
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DOI：
10.1116/1.4894453
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发表时间：
2014-11-01
影响因子：
2.9
通讯作者：
Coffey, Kevin R.
中科院分区：
文献类型：
--
作者：
Barmak, Katayun;Darbal, Amith;Coffey, Kevin R.
研究了纳米晶Cu中各种缺陷对测量电阻率的相对贡献，包括孪晶界散射的定量计算。它一直难以定量评估的影响孪晶界散射的电阻率的经典尺寸效应，由于在表征纳米晶铜孪晶界的限制。在这项研究中，纳米晶铜薄膜的晶体取向图，通过在透射电子显微镜的旋进辅助电子衍射。这些取向图像用于表征晶界和测量微观结构的平均晶粒尺寸，考虑和不考虑孪晶界。这些研究的结果表明，从晶界散射的贡献是主导因素（与表面散射相比），导致电阻率增强。利用Fuchs-Sondheimer表面散射模型和Mayadas-Shatzkes晶界散射模型，结合Matthiessen规则，可以很好地描述电阻率数据，表面镜面反射系数p = 0.48，晶界反射系数R = 0.26。(C)2014年美国真空学会。
The relative contributions of various defects to the measured resistivity in nanocrystalline Cu were investigated, including a quantitative account of twin-boundary scattering. It has been difficult to quantitatively assess the impact twin boundary scattering has on the classical size effect of electrical resistivity, due to limitations in characterizing twin boundaries in nanocrystalline Cu. In this study, crystal orientation maps of nanocrystalline Cu films were obtained via precession-assisted electron diffraction in the transmission electron microscope. These orientation images were used to characterize grain boundaries and to measure the average grain size of a microstructure, with and without considering twin boundaries. The results of these studies indicate that the contribution from grain-boundary scattering is the dominant factor (as compared to surface scattering) leading to enhanced resistivity. The resistivity data can be well-described by the combined Fuchs-Sondheimer surface scattering model and Mayadas-Shatzkes grain-boundary scattering model using Matthiessen's rule with a surface specularity coefficient of p = 0.48 and a grain-boundary reflection coefficient of R = 0.26. (C) 2014 American Vacuum Society.