Transient Currents Induced in 6H-SiC MOS Capacitors by Oxygen Ion Incidence
Transient Currents Induced in 6H-SiC MOS Capacitors by Oxygen Ion Incidence
复制标题
氧离子入射在 6H-SiC MOS 电容器中感应的瞬态电流
DOI：
10.4028/www.scientific.net/msf.615-617.517
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
K. Kawano
中科院分区：
文献类型：
--
作者：
N. Iwamoto;S. Onoda;T. Ohshima;K. Kojima;K. Kawano
用氧离子测量了6 H-SiC MOS电容器中的单粒子瞬态电流。通过瞬态电流计算从样品收集的电荷。将漂移扩散模型应用于电荷，估算了电子的扩散长度。研究了γ射线辐照MOS电容器产生的瞬态电流。γ射线照射后，瞬态电流没有明显变化。
Single event transient currents induced in 6H-SiC MOS capacitors are measured by using oxygen ions. Charges collected from the samples are calculated by the transient currents. Applying the drift-diffusion model to the charges, the diffusion length of electron is estimated. Transient currents induced in the gamma ray irradiated MOS capacitors are also investigated. No significant change in the transient currents is observed after gamma ray irradiation.