Significant Die-Shift Reduction and μLED Integration Based on Die-First Fan-Out Wafer-Level Packaging for Flexible Hybrid Electronics
Significant Die-Shift Reduction and μLED Integration Based on Die-First Fan-Out Wafer-Level Packaging for Flexible Hybrid Electronics
复制标题
基于芯片优先扇出晶圆级封装的柔性混合电子器件显着减少芯片移位并实现 μLED 集成
DOI:
10.1109/tcpmt.2020.3009640
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发表时间:
2020
期刊:
影响因子:
--
通讯作者:
and Tetsu Tanaka,
中科院分区:
文献类型:
--
作者:
Takafumi Fukushima ;Yuki Susumago;Zhengyang Qian;Chidai Shima;Bang Du;Noriyuki Takahashi;Shuta Nagata;Tomo Odashima;Hisashi Kino;and Tetsu Tanaka,
Typical die shift is beyond several tens micrometers or more, which is a serious problem on advanced fan-out wafer-level packaging (FOWLP), to give inevitable misalignment errors in the subsequent photolithography processes for fine-pitch redistributed wiring layer (RDL) formation. In particular, this problem is expected to grow all the more serious in chiplets and tiny dies less than 1 mm in a side. In this work, the use of an anchoring layer is proposed to fix these dies/chiplets on a double-side laminate thermo-release tape and drastically reduce the die shift. In addition, an on-nail photoplethysmogram (PPG) sensor module as a part of flexible hybrid electronics (FHE) is integrated with μLED (270 μm × 270 μm) based on a die-first FOWLP methodology using a biocompatible polydimethylsiloxane (PDMS) mold resin for realtime monitoring pulse wave and percutaneous oxygen saturation (SpO2). The repeated bendability of fan-out Au wirings formed on the PDMS and the current-voltage (I-V) behavior of the μLED before and after die embedment in the PDMS is characterized.