A simple and efficient concept for setting up multi-VT devices in thin BOx fully-depleted SOI technology
A simple and efficient concept for setting up multi-VT devices in thin BOx fully-depleted SOI technology
复制标题
在薄 BOx 全耗尽型 SOI 技术中设置多 VT 器件的简单而高效的概念
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
A. Amara
中科院分区：
文献类型：
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作者：
J. Noel;O. Thomas;C. Fenouillet;M. Jaud;P. Scheiblin;A. Amara
本文提出了一种新颖而简单的全耗尽SOI MOSFET多电压源的概念。实现了低、标准和高阈值电压（VT）器件，而不会降低FDSOI技术的良好沟道静电控制和低VT色散。该概念是基于使用薄埋氧化物（BOx）与掺杂和偏置背板（BP）的集成相结合。这通过TCAD模拟进行了评估，并以45 nm技术节点中的LSTP（低待机功耗）BULK技术为基准。电气结果突出了所提出的概念的效率。LVT、SVT和HVT器件显示出与LSTP BULK技术（ION-LVT=1.35×ION-HVT）相似的结果，ION/IOFF电流比高于60倍。此外，该概念已应用于双版本的6 T SRAM单元：HVT和LVT突出了出色的单元电流比（47%）。
In this paper, an original and simple concept for setting up multi-VT for fully-depleted (FD) silicon-on-insulator (SOI) MOSFETs is presented. Low, standard and high threshold voltage (VT) devices are achieved without degrading the good channel electrostatic control and the low VT dispersion of the FDSOI technology. The concept is based on the use of a thin buried oxide (BOx) combined with the integration of a doped and biased back plane (BP). This was evaluated by TCAD simulations and benchmarked to the LSTP (Low STandby Power) BULK technology in 45nm technology node. The electrical results highlight the efficiency of the proposed concept. The LVT, SVT and HVT devices show similar results than in the LSTP BULK technology (ION-LVT=1.35×ION-HVT) with ION/IOFF current ratios higher than 6 decades. Moreover, the concept has been applied to a 6T SRAM cell declined in dual versions: HVT and LVT highlighting excellent cell current ratios (47%).