Study of the Stability of 4H-SiC Detectors by Thermal Neutron Irradiation
Study of the Stability of 4H-SiC Detectors by Thermal Neutron Irradiation
复制标题
热中子辐照4H-SiC探测器稳定性研究
DOI：
10.4028/www.scientific.net/msf.821-823.875
复制
发表时间：
2015
期刊：
影响因子：
--
通讯作者：
A. Hallén
中科院分区：
文献类型：
--
作者：
F. Issa;L. Ottaviani;V. Vervisch;D. Szalkai;L. Vermeeren;A. Lyoussi;A. Kuznetsov;M. Lazar;A. Klix;O. Palais;R. Ferone;A. Hallén
基于铝金属接触内10 B离子注入，实现了两种类型的4 H-SiC半导体探测器（D1和D2）。第一探测器在10 B注入后显示出高漏电流和低信噪比。然而，有关注入参数的改进导致更低的漏电流，从而导致更高的信噪比。此外，这样的探测器显示其在不同的热中子通量下的稳定性，显示出可重复的脉冲高度谱和相同的电气行为之前和之后的照射。
Two types of 4H-SiC semiconductor detectors (D1 and D2) are realized based on ion implantation of 10B inside the aluminum metallic contact. The first detector shows a high leakage current after 10B implantation and low signal to noise ratio. However, improvements concerning the implantation parameters led to lower leakage current and thus to higher signal to noise ratio. Moreover such detectors show their stability under different thermal neutron fluxes showing the reproducible features of the pulse height spectra and same electrical behaviour before and after irradiation.