The influence of impurity concentration on exciton photoluminescence in GaAs and InP
The influence of impurity concentration on exciton photoluminescence in GaAs and InP
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杂质浓度对GaAs和InP激子光致发光的影响
DOI：
10.1088/0268-1242/7/11/020
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发表时间：
1992
期刊：
影响因子：
--
通讯作者：
L. Giling
中科院分区：
文献类型：
--
作者：
H. Pen;F. Dreissen;S. Olsthoorn;L. Giling
作者报道了金属有机物气相外延生长的高纯度标称n型GaAs和InP层的激子光致发光（PL）光谱的调查。激子极化激元动力学的结果进行了讨论。由77 K霍尔测量得到的中性施主束缚激子（D_0，X）跃迁和自由激子极化激子（FX）跃迁的积分发射强度之比rDF=I（D_0，X）/I（FX）与中性施主浓度nD_0呈次线性关系。这种关系对于估计高纯度材料中的载流子浓度特别有用，因为高纯度材料由于耗尽而不能通过霍尔测量来表征。
The authors report an investigation of the exciton photoluminescence (PL) spectra of high-purity nominally n-type GaAs and InP layers, grown by metalorganic vapour phase epitaxy. The results are discussed in terms of exciton-polariton kinetics. The ratio of the integrated emission intensities of neutral donor-bound exciton (D0, X) transitions and free exciton-polariton (FX) transitions rDF=I(D0, X)/I(FX) shows a sublinear dependence upon neutral donor concentration nD0 deduced from 77 K Hall measurements. This relationship is particularly useful for estimating carrier concentrations in high-purity materials, which cannot be characterized by Hall measurements due to depletion.