Control of the surface electronic structure 01 SrTi03 (001) by aodulation of the density of oxygen vacancies
Control of the surface electronic structure 01 SrTi03 (001) by aodulation of the density of oxygen vacancies
复制标题
通过调节氧空位密度控制表面电子结构 01 SrTi03 (001)
DOI：
10.1088/0953-8984/25/16/162202
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
M. Mat sumo to and K. Fukutani
中科院分区：
文献类型：
--
作者：
K. Takeyasu;K. Fukada;M. Mat sumo to and K. Fukutani
利用紫外光电子能谱（UPS）研究了电子辐照和氧吸附对SrTiO3（001）表面电子结构的影响。通过UPS观察到，电子辐照诱导了一个带隙内态（IGS），表面保持1× 1，这被认为是由于氧的电子激发脱附（ESD）导致的最高表面上的氧空位。电子辐照也引起了向下移动的价带最大值，表示向下带弯曲和表面上的导电层的形成。另一方面，氧在电子辐照表面上的吸附降低了IGS沿着的强度，并产生向上的能带弯曲，这指向导电层的消失。结果表明，静电放电和氧吸附可以用来控制表面电子结构之间的半导体和金属制度的转换，通过改变的氧空位的密度。
The influence of electron irradiation and the subsequent oxygen adsorption on the electronic structure of an SrTiO 3 (001) surface was investigated by ultraviolet photoemission spectroscopy (UPS). Electron irradiation induced an in-gap state (IGS) as observed by UPS keeping the surface 1× 1, which is considered to originate from oxygen vacancies on the topmost surface due to the electron-stimulated desorption (ESD) of oxygen. Electron irradiation also caused a downward shift of the valence band maximum, indicating downward band bending and the formation of a conductive layer on the surface. Adsorption of oxygen on the electron-irradiated surface, on the other hand, reduced the intensity of the IGS along with yielding upward band bending, which points to disappearance of the conductive layer. The results show that ESD and oxygen adsorption can be used to control the surface electronic structure switching between semiconducting and metallic regimes by changing the density of the oxygen vacancies.