Fe-based magnetic-semiconductor hybrid structures for photocarrier-induced magnetism
Fe-based magnetic-semiconductor hybrid structures for photocarrier-induced magnetism
复制标题
用于光载流子感应磁性的铁基磁半导体混合结构
DOI：
10.1063/1.372733
复制
发表时间：
2000
影响因子：
3.2
通讯作者：
S. Koshihara
中科院分区：
文献类型：
--
作者：
S. Haneda;H. Munekata;Y. Takatani;S. Koshihara
本文研究了分子束外延法制备GaAs-Fe复合结构。在160 K的红光照射下，观察到磁化强度增强。通过对磁化和磁输运特性的研究，我们认为磁化强度的增强与光生载流子与磁性包裹体之间的相互作用密切相关。
Preparation of GaAs–Fe composite structures has been studied by molecular-beam epitaxy. Enhanced magnetization has been observed under the red-light irradiation at 160 K. Through the study of both magnetization and magnetotransport characteristics, we believe that enhanced magnetization is strongly related to the interaction between photogenerated carriers and magnetic inclusions.