A ferroelectric field effect transistor based synaptic weight cell
A ferroelectric field effect transistor based synaptic weight cell
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DOI：
10.1088/1361-6463/aad6f8
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发表时间：
2018-10-31
影响因子：
3.4
通讯作者：
Datta, Suman
中科院分区：
文献类型：
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作者：
Jerry, Matthew;Dutta, Sourav;Datta, Suman
密集模拟突触交叉杆阵列是神经形态硬件加速器的一个很有前途的候选，因为它能够通过在存储阵列本身内执行原位向量矩阵乘积和权重更新来减轻数据移动。然而，许多模拟重量存储单元遭受长延迟或低动态范围，限制了可实现的性能。在这项工作中，我们证明了可以利用铁电场效应晶体管（FeFET）中的电压控制部分极化开关动力学来实现具有大动态范围（67 x）和低延迟权重更新（50 ns）的32态非易失性模拟突触权重单元，用于调幅脉冲方案。
Dense analog synaptic crossbar arrays are a promising candidate for neuromorphic hardware accelerators due to the ability to mitigate data movement by performing in-situ vector-matrix products and weight updates within the storage array itself. However, many analog weight storage cells suffer from long latencies or low dynamic ranges, limiting the achievable performance. In this work, we demonstrate that the voltage-controlled partial polarization switching dynamics in ferroelectric-field-effect transistors (FeFET) can be harnessed to enable a 32 state non-volatile analog synaptic weight cell with large dynamic range (67 x) and low latency weight updates (50 ns) for an amplitude modulated pulse scheme.