Metal‐oxide‐semiconductor field‐effect‐transistor substrate current during Fowler–Nordheim tunneling stress and silicon dioxide reliability
Metal‐oxide‐semiconductor field‐effect‐transistor substrate current during Fowler–Nordheim tunneling stress and silicon dioxide reliability
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DOI：
10.1063/1.357438
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发表时间：
1994-09
影响因子：
3.2
通讯作者：
Klaus F. Schuegrafa;C. Hu
中科院分区：
文献类型：
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作者：
Klaus F. Schuegrafa;C. Hu
研究了当栅极氧化物受到Fowler-Nordheim应力时，金属氧化物半导体场效应晶体管衬底电流的来源。阳极空穴注入电流在25 ~ 130 A和2.4 ~ 12 V之间预测二氧化硅击穿。对于厚度大于55 A的氧化物，测量的衬底电流完全是由阳极空穴注入引起的，而在厚度较薄的氧化物中，价带电子的隧穿作用有助于衬底电流的产生。价带电子隧穿电流随着氧化物应力的增加而增加，类似于低压栅极氧化物泄漏；显然，这两者都被陷阱辅助隧道增强了。对于厚度在25 ~ 130 A之间的氧化物，直接验证的阳极孔注入理论能够准确地模拟二氧化硅击穿。
The origin of the substrate current of a metal‐oxide‐semiconductor field‐effect transistor when the gate oxide undergoes Fowler–Nordheim stress is investigated. It is also shown that anode hole injection current predicts the breakdown of silicon dioxide between 25 and 130 A and 2.4 and 12 V. While the measured substrate current is entirely due to anode hole injection for oxides thicker than 55 A, tunneling by valence‐band electrons contributes to the substrate current in thinner oxides. Valence‐band electron tunneling current is shown to increase with oxide stressing similar to low‐voltage gate oxide leakage; apparently, both are enhanced by trap‐assisted tunneling. For oxides of thickness between 25 and 130 A, the theory of anode hole injection directly verified for oxides thicker than 55 A is able to model silicon dioxide breakdown accurately.