Systematic study of Si-based GeSn photodiodes with 2.6 μm detector cutoff for short-wave infrared detection
Systematic study of Si-based GeSn photodiodes with 2.6 μm detector cutoff for short-wave infrared detection
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DOI：
10.1364/oe.24.004519
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发表时间：
2016-03-07
期刊：
影响因子：
3.8
通讯作者：
Yu, Shui-Qing
中科院分区：
文献类型：
--
作者：
Thach Pham;Du, Wei;Yu, Shui-Qing
正入射Ge 1-xSnx光电二极管探测器与Sn的成分为7和10%已被证明。这种探测器是基于Ge/Ge 1-xSnx/Ge双异质结直接生长在Si衬底上通过化学气相沉积系统。在300 ~ 77 K温度范围内，利用电学和光学特性对这些探测器的温度依赖性进行了研究。光谱响应高达2.6 μ m，实现了10%的Sn器件在室温下。在1.55 μ m处测得的峰值响应率和比探测率（D*）分别为0.3A/W和4 × 109 cmHz（1/2）W（-1）。在77 K时，7%Sn器件的光谱D* 仅比在相同波长范围内工作的扩展InGaAs光电二极管低一个数量级，表明GeSn基光电探测器的前景广阔。(C)2016美国光学学会
Normal-incidence Ge1-xSnx photodiode detectors with Sn compositions of 7 and 10% have been demonstrated. Such detectors were based on Ge/Ge1-xSnx/Ge double heterostructures grown directly on a Si substrate via a chemical vapor deposition system. A temperature-dependence study of these detectors was conducted using both electrical and optical characterizations from 300 to 77 K. Spectral response up to 2.6 mu m was achieved for a 10% Sn device at room temperature. The peak responsivity and specific detectivity (D*) were measured to be 0.3 A/W and 4 x 109 cmHz(1/2)W(-1) at 1.55 mu m, respectively. The spectral D* of a 7% Sn device at 77 K was only one order-of-magnitude lower than that of an extended-InGaAs photodiode operating in the same wavelength range, indicating the promising future of GeSn-based photodetectors. (C) 2016 Optical Society of America