Triazine-Based Graphitic Carbon Nitride: a Two-Dimensional Semiconductor
Triazine-Based Graphitic Carbon Nitride: a Two-Dimensional Semiconductor
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DOI：
10.1002/anie.201402191
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发表时间：
2014-07-14
影响因子：
16.6
通讯作者：
Bojdys, Michael J.
中科院分区：
文献类型：
--
作者：
Algara-Siller, Gerardo;Severin, Nikolai;Bojdys, Michael J.
石墨碳氮化物已被预测为在结构上类似于仅含碳的石墨，但具有固有的带隙。我们已经成长，第一次，宏观上大的结晶薄膜的三嗪基，石墨氮化碳（TGCN）使用离子交换，界面反应开始与丰富的单体双氰胺。薄膜由堆叠的二维（2D）晶体组成，厚度在几个到几百个原子层之间。扫描力和透射电子显微镜显示长程，面内秩序，而光谱，X射线光电子能谱，密度泛函理论计算证实了直接带隙1.6和2.0 eV之间。因此，TGCN对于诸如场效应晶体管和发光二极管的电子器件是有意义的。
Graphitic carbon nitride has been predicted to be structurally analogous to carbon-only graphite, yet with an inherent bandgap. We have grown, for the first time, macroscopically large crystalline thin films of triazine-based, graphitic carbon nitride (TGCN) using an ionothermal, interfacial reaction starting with the abundant monomer dicyandiamide. The films consist of stacked, two-dimensional (2D) crystals between a few and several hundreds of atomic layers in thickness. Scanning force and transmission electron microscopy show long-range, in-plane order, while optical spectroscopy, X-ray photoelectron spectroscopy, and density functional theory calculations corroborate a direct bandgap between 1.6 and 2.0 eV. Thus TGCN is of interest for electronic devices, such as field-effect transistors and light-emitting diodes.