Replacing the PECVD-SiO2 in the through-silicon via of high-density 3D LSIs with highly scalable low cost organic liner: Merits and demerits
Replacing the PECVD-SiO2 in the through-silicon via of high-density 3D LSIs with highly scalable low cost organic liner: Merits and demerits
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DOI：
10.1109/ectc.2014.6897353
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发表时间：
2014-05
期刊：
影响因子：
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通讯作者：
M. Mariappan;T. Fukushima;JiChel Beatrix;H. Hashimoto;Yutaka S. Sato;Kang-wook Lee;Tetsu Tanaka;M. Koyanagi
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文献类型：
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作者：
M. Mariappan;T. Fukushima;JiChel Beatrix;H. Hashimoto;Yutaka S. Sato;Kang-wook Lee;Tetsu Tanaka;M. Koyanagi
提出了一种抑制3D-LSI芯片中常规铜TSV引起的热机械应力的新方法，并进行了制作和测试。在该方法中，热化学气相沉积生长的有机聚酰亚胺基聚合物沿TSV的侧壁沿着共形地沉积。测试了所生长的聚合物的物理性能和机械性能，并且还评估了它们在最小化邻近和通孔空间Si中的热机械应力中的作用。研究发现，用有机聚合物取代传统的SiO2电介质衬垫（夹在通孔金属和Si之间）极大地有助于抑制热机械应力，从而抑制禁区。
A novel approach to suppress the conventional Cu-TSV induced thermo-mechanical stress in 3D-LSI chip is proposed, fabricated and tested. In this approach, a thermal-chemical-vapor-deposition grown organic poly-imide based polymer is conformally deposited along the side wall of the TSV. As-grown polymer was tested for its physical properties and mechanical properties, and was also evaluated for their role in minimizing the thermo-mechanical stress in vicinal and via-space Si. It was found that replacing the conventional SiO2 dielectric liner (sandwiched between the via-metal and Si) with organic polymer greatly helps in suppressing the thermo-mechanical stress, and thus the keep-out zone.