Metal-induced gap states modeling of metal-Ge contacts with and without a silicon nitride ultrathin interfacial layer
Metal-induced gap states modeling of metal-Ge contacts with and without a silicon nitride ultrathin interfacial layer
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DOI：
10.1063/1.3581159
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发表时间：
2011-05
影响因子：
3.2
通讯作者：
J. Wager;J. Robertson
中科院分区：
文献类型：
--
作者：
J. Wager;J. Robertson
Metal-induced gap states (MIGS) modeling is used to elucidate the lack of Fermi level pinning at metal-insulator−Ge interfaces. Energy band diagram assessment reveals the existence of two dipoles at the metal-insulator and the insulator−semiconductor interface. The metal−insulator dipole modulates the metal-insulator interface electron barrier and the voltage drop across the insulator but does not affect the barrier to electron transport across the metal-insulator−Ge interface. Rather, this electron transport barrier is established by the metal-semiconductor work function difference and the insulator−semiconductor dipole. Thus, the lack of Fermi level pinning at a metal-insulator−Ge interface is attributed to the fact that the electron transport barrier does not depend upon MIGS screening. A quantitative formulation of this metal-insulator−semiconductor interface MIGS-based model confirms the lack of Fermi level pinning. Furthermore, it indicates that care must be taken when assessing experimental barrier...
